Hydrogen as a Cause of Doping in Zinc Oxide
Zinc oxide, a wide-band-gap semiconductor with many technological applications, typically exhibits n-type conductivity. The cause of this conductivity has been widely debated. A...
Publications
2 shownFirst-principles calculations for point defects in solids
Point defects and impurities strongly affect the physical properties of materials and have a decisive impact on their performance in applications. First-principles calculations ...
Frequent Co-Authors
Researcher Info
- h-index
- 2
- Publications
- 2
- Citations
- 4,832
- Institution
- Fritz Haber Institute of the Max Planck Society
External Links
Identifiers
- ORCID
- 0000-0002-4212-5990
Impact Metrics
h-index
2
h-index: Number of publications with at least h citations each.