GaAs <i>p</i>-<i>n</i> junction formed in quantum wire crystals
A p-n junction is formed for the first time in a cross-sectional area of a GaAs wire crystal with a diameter of about 100 nm. Ultrafine cylindrical growth by metalorganic vapor ...
A p-n junction is formed for the first time in a cross-sectional area of a GaAs wire crystal with a diameter of about 100 nm. Ultrafine cylindrical growth by metalorganic vapor ...
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