Radiative Recombination in Silicon p‐n Junctions
Abstract The electroluminescence of silicon was investigated in the temperature range between 300 and 77 °K. The near edge emission is due to indirect band‐to‐band transitions a...
Publications
1 shownFrequent Co-Authors
Researcher Info
- h-index
- 1
- Publications
- 1
- Citations
- 61
- Institution
- Goethe University Frankfurt
External Links
Impact Metrics
h-index
1
h-index: Number of publications with at least h citations each.