Abstract
This work presents a novel method entitled "device transfer by backside etching (DTBE)" for transferring thin-film devices from Si wafers to a glass or plastic substrate. First, high performance poly-Si thin-film transistors (TFTs) were fabricated on a Si wafer and then adhered to glass or plastic substrates. The remaining Si was removed delicately using wafer backside chemical-mechanical polishing (CMP) and wet chemical etching. The devices after transferring exhibit comparable electrical characteristics to the original ones on Si substrates. The new transfer scheme has quite attractive applications for fabricating high-quality displays on low-cost substrates with low melting temperatures.
Keywords
WaferMaterials scienceSubstrate (aquarium)Etching (microfabrication)Thin-film transistorChemical-mechanical planarizationOptoelectronicsIsotropic etchingPolishingThin filmTransistorNanotechnologyComposite materialLayer (electronics)Electrical engineering
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Publication Info
- Year
- 2003
- Type
- article
- Volume
- 42
- Issue
- Part 2, No.9A/B
- Pages
- L1044-L1046
- Citations
- 17
- Access
- Closed
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Cite This
Shuo-Cheng Wang,
Ching‐Fa Yeh,
Chien-Kai Huang
et al.
(2003).
Device Transfer Technology by Backside Etching (DTBE) for Poly-Si Thin-Film Transistors on Glass/Plastic Substrate.
Japanese Journal of Applied Physics
, 42
(Part 2, No.9A/B)
, L1044-L1046.
https://doi.org/10.1143/jjap.42.l1044
Identifiers
- DOI
- 10.1143/jjap.42.l1044