Abstract

We present device results from polysilicon thin film transistors (TFTs) fabricated at a maximum temperature of 100 °C on polyester substrates. Critical to our success has been the development of a processing cluster tool containing chambers dedicated to laser crystallization, dopant deposition, and gate oxidation. Our TFT fabrication process integrates multiple steps in this tool, and uses the laser to crystallize deposited amorphous silicon as well as create heavily doped TFT source/drain regions. By combining laser crystallization and doping, a plasma enhanced chemical vapor deposition SiO2 layer for the gate dielectric, and postfabrication annealing at 150 °C, we have succeeded in fabricating TFTs with ION/IOFF ratios >5×105 and electron mobilities >40 cm2/V s on polyester substrates.

Keywords

Thin-film transistorMaterials scienceOptoelectronicsCrystallizationDopant ActivationAmorphous solidDopantDopingDielectricAnnealing (glass)Amorphous siliconChemical vapor depositionGate dielectricTransistorSiliconNanotechnologyLayer (electronics)Chemical engineeringComposite materialElectrical engineeringCrystallographyCrystalline silicon

Affiliated Institutions

Related Publications

Thin Film Transistors : Materials and Processes

Yue Kuo

1 Introduction.- 1. Brief History of Thin Film Transistors.- 2. a-Si:H TFT LCDs.- 3. Unique a-Si:H TFT Issues.- 4. Chapter Flow in the Book.- References.- 2 a-Si:H TFT Thin Film...

2003 CERN Document Server (European Organi... 77 citations

Thin-Film Transistors

Cherie R. Kagan , Paul Andry

Introduction and device characteristics of thin-film transistors, Michael S. Shur historical perspective (II-VI semiconducting channel materials for TFTs), W. Howard and Mark Br...

2007 106 citations

Publication Info

Year
1999
Type
article
Volume
17
Issue
4
Pages
1946-1949
Citations
96
Access
Closed

External Links

View on DOI.org

Social Impact

Altmetric
PlumX Metrics

Social media, news, blog, policy document mentions

Citation Metrics

96
OpenAlex

Cite This

P.G. Carey, Patrick M. Smith, Steven D. Theiss et al. (1999). Polysilicon thin film transistors fabricated on low temperature plastic substrates. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films , 17 (4) , 1946-1949. https://doi.org/10.1116/1.581708

Identifiers

DOI
10.1116/1.581708