Abstract
We have performed, for the first time, measurements of the electronic structure of the Si-SiO2 interface with electron energy loss spectroscopy (ELS) in connection with argon-ion sputtering. We have measured the depth profiles of both the 5.1- and 7.2-eV ELS peaks, which have been previously observed for both the Si surface with oxygen adsorbed and SiO2 with defects present. We have found that the intensities of these peaks, especially that of the 5.1-eV peak, show a maximum at the Si-SiO2 interface. This suggests that these ELS peaks come from special bonding configurations characteristic of the connective layer between Si and SiO2 at the interface.
Keywords
Electron energy loss spectroscopySiliconArgonMaterials scienceSpectroscopyElectron spectroscopySputteringAtomic physicsX-ray photoelectron spectroscopyElectronAnalytical Chemistry (journal)IonOxygenChemistryThin filmOptoelectronicsNuclear magnetic resonanceNanotechnologyPhysics
Affiliated Institutions
Related Publications
Electronic structure of carbidic and graphitic carbon on Ni(111)
The electronic structure of carbon overlayers on Ni(111) has been investigated by using photoemission, energy-loss, and ionization-loss spectroscopy techniques. The combined use...
Photodetachment Spectroscopy of a Doubly Charged Anion: Direct Observation of the Repulsive Coulomb Barrier
Photoelectron spectra of citric acid doubly charged anion were measured. The repulsive Coulomb barrier due to the two excess charges was directly probed and estimated to be abou...
Localized states in inverted silicon-silicon dioxide interfaces
It is suggested that electrons in the inversion layer at an Si-SiO2 interface can behave like electrons in a two-dimensional disordered system. The conduction band will then hav...
Properties of amorphous carbon–silicon alloys deposited by a high plasma density source
The addition of silicon to hydrogenated amorphous carbon can have the advantageous effect of lowering the compressive stress, improving the thermal stability of its hydrogen, an...
Silicon dioxide and the chalcogenide semiconductors; similarities and differences
Abstract The purpose of this article is to examine current hypotheses about the optical and electrical properties of the amorphous chalcogenide semiconductors, and to examine wh...
Publication Info
- Year
- 1979
- Type
- article
- Volume
- 35
- Issue
- 2
- Pages
- 199-201
- Citations
- 24
- Access
- Closed
External Links
Social Impact
Altmetric
PlumX Metrics
Social media, news, blog, policy document mentions
Citation Metrics
24
OpenAlex
Cite This
Toru Adachi,
C. R. Helms
(1979).
Electron energy loss spectroscopy studies of the Si-SiO2 interface.
Applied Physics Letters
, 35
(2)
, 199-201.
https://doi.org/10.1063/1.91036
Identifiers
- DOI
- 10.1063/1.91036