Abstract

Individual graphene oxide sheets subjected to chemical reduction were electrically characterized as a function of temperature and external electric fields. The fully reduced monolayers exhibited conductivities ranging between 0.05 and 2 S/cm and field effect mobilities of 2-200 cm2/Vs at room temperature. Temperature-dependent electrical measurements and Raman spectroscopic investigations suggest that charge transport occurs via variable range hopping between intact graphene islands with sizes on the order of several nanometers. Furthermore, the comparative study of multilayered sheets revealed that the conductivity of the undermost layer is reduced by a factor of more than 2 as a consequence of the interaction with the Si/SiO2 substrate.

Keywords

GrapheneOxideMaterials scienceNanotechnologyChemical engineeringChemical physicsChemistry

MeSH Terms

CrystallizationElectric ConductivityElectrochemistryElectronicsGraphiteMicroscopyAtomic ForceNanoparticlesNanostructuresNanotechnologyOxidesSilicon DioxideSpectrum AnalysisRamanSurface PropertiesTemperature

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Publication Info

Year
2007
Type
article
Volume
7
Issue
11
Pages
3499-3503
Citations
2349
Access
Closed

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Cite This

Cristina Gómez‐Navarro, R. Thomas Weitz, Alexander M. Bittner et al. (2007). Electronic Transport Properties of Individual Chemically Reduced Graphene Oxide Sheets. Nano Letters , 7 (11) , 3499-3503. https://doi.org/10.1021/nl072090c

Identifiers

DOI
10.1021/nl072090c
PMID
17944526

Data Quality

Data completeness: 86%