Electrons on the surface of Bi2Se3 form a topologically-ordered two dimensional gas with a non-trivial Berry's phase

Y. Xia; L. Andrew Wray; Dong Qian; David Hsieh; A. Pal; Hsin Lin; Arun Bansil; D. Grauer; Y. S. Hor; R. J. Cava; M. Zahid Hasan

doi:10.48550/arxiv.0812.2078

Abstract

The interface between a superconductor and a topological insulator has been proposed to harbor novel quasiparticles that realize physical schemes for fault-tolerant quantum computation. Here, we present high resolution angle-resolved photoemission experimental results, which along with first principles calculations, suggest that the surface-edge states of Bi2Se3 form a topological 2D metal. When magnetic atoms are deposited, the surface tends to lose Kramers' degeneracy and a k-space connection thread between the bulk valence and conduction bands is lost. Our observed states carry a πBerry's phase suggesting that although the real materials are often electron doped fully undoped Bi2Se3 would be a Z2 topological insulator at room temperature.

Keywords

Geometric phaseTopological insulatorQuasiparticleCondensed matter physicsElectronSuperconductivitySurface statesPhysicsAngle-resolved photoemission spectroscopyValence electronTopology (electrical circuits)Surface (topology)Materials scienceElectronic structureQuantum mechanicsGeometry

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Publication Info

Year: 2008
Type: preprint
Citations: 10
Access: Closed

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APA Style

                            
                                    Y. Xia, 
                                
                                    L. Andrew Wray, 
                                
                                    Dong Qian
                                
                                et al.
                            
                            (2008). 
                            Electrons on the surface of Bi2Se3 form a topologically-ordered two dimensional gas with a non-trivial Berry's phase. 
                            arXiv (Cornell University)
                            
                            .
                            https://doi.org/10.48550/arxiv.0812.2078

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DOI: 10.48550/arxiv.0812.2078

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Data completeness: 77%