Growth and characterization of p-type HgTe/Hg1−xCdxTe single quantum wells using nitrogen and arsenic

Abstract

p-type HgTe/Hg0.3Cd0.7Te(001) quantum wells (QWs) have been grown with molecular-beam epitaxy (MBE) on Cd0.96Zn0.04Te substrates using modulation doping techniques. Both plasma-excited nitrogen and evaporated cadmium arsenide have been utilized for in situ doping during MBE growth. A comparison of the electrical and structural properties of QWs fabricated by the two doping techniques has been made. Two-dimensional hole concentrations in nitrogen-doped QWs (up to 1.0×1012 cm−2) were significantly higher than in arsenic-doped QWs (below 0.5×1012 cm−2). However, by means of a gate-controlled Hall bar, hole densities up to 1.1×1012 cm−2 have been achieved in the latter system. Hall mobilities up to 1.0×105 cm2/(V s) have been measured. Whereas all samples exhibit pronounced although irregular Shubnikov–de Haas oscillations, quantum Hall plateaus in the arsenic-doped samples are broader and better defined.

Keywords

Molecular beam epitaxyQuantum wellArsenicDopingHall effectShubnikov–de Haas effectGallium arsenideChemistryCondensed matter physicsMaterials scienceAnalytical Chemistry (journal)EpitaxyOptoelectronicsElectrical resistivity and conductivityNanotechnologyOpticsPhysicsQuantum oscillationsSuperconductivityMetallurgy

Affiliated Institutions

University of Würzburg DE

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Publication Info

Year: 2001
Type: article
Volume: 79
Issue: 24
Pages: 3980-3982
Citations: 9
Access: Closed

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APA Style

                            
                                
                                    K. Ortner, 
                                
                                    X. C. Zhang, 
                                
                                    S. Oehling
                                
                                et al.
                            
                            (2001). 
                            Growth and characterization of <i>p</i>-type HgTe/Hg1−xCdxTe single quantum wells using nitrogen and arsenic. 
                            Applied Physics Letters
                            , 79
                            (24)
                            , 3980-3982.
                            https://doi.org/10.1063/1.1425465
                        

Identifiers

DOI: 10.1063/1.1425465