Growth and characterization of <i>p</i>-type HgTe/Hg1−xCdxTe single quantum wells using nitrogen and arsenic
p-type HgTe/Hg0.3Cd0.7Te(001) quantum wells (QWs) have been grown with molecular-beam epitaxy (MBE) on Cd0.96Zn0.04Te substrates using modulation doping techniques. Both plasma-...