High Performance Multiple Inversion Layer Selective Buried Triple Gate Vertical Trench Power MOSFET

M. Ejaz Aslam Lodhi; Sajad A. Loan; Abdul Quaiyum Ansari; Shabana Urooj; Kiran Napte

doi:10.1038/s41598-025-27283-4

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Publication Info

Year: 2025
Type: article
Volume: 15
Issue: 1
Pages: 43453-43453
Citations: 0
Access: Closed

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APA Style

                            
                                
                                    M. Ejaz Aslam Lodhi, 
                                
                                    Sajad A. Loan, 
                                
                                    Abdul Quaiyum Ansari
                                
                                et al.
                            
                            (2025). 
                            High Performance Multiple Inversion Layer Selective Buried Triple Gate Vertical Trench Power MOSFET. 
                            Scientific Reports
                            , 15
                            (1)
                            , 43453-43453.
                            https://doi.org/10.1038/s41598-025-27283-4
                        

Identifiers

DOI: 10.1038/s41598-025-27283-4