Cyclotron Resonance of Electrons in an Inversion Layer on Si

G. Abstreiter; P. Kneschaurek; J. P. Kotthaus; J. F. Koch

doi:10.1103/physrevlett.32.104

Abstract

We have observed cyclotron resonance of electrons in an inversion layer on a (100) surface of $p$-type Si. The effective mass ${{m}_{c}}^{*}$ is found to be about $0.21{m}_{0}$, compared with a bulk value of $0.1905{m}_{0}$. The surface mass value decreases slightly with increasing gate voltage.

Keywords

Cyclotron resonanceElectronElectron cyclotron resonanceMaterials scienceAtomic physicsEffective mass (spring–mass system)CyclotronInversion (geology)Resonance (particle physics)Fourier transform ion cyclotron resonanceCondensed matter physicsNuclear magnetic resonancePhysicsMass spectrometryNuclear physics

Affiliated Institutions

Technical University of Munich DE

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Publication Info

Year: 1974
Type: article
Volume: 32
Issue: 3
Pages: 104-107
Citations: 101
Access: Closed

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APA Style

                            
                                
                                    G. Abstreiter, 
                                
                                    P. Kneschaurek, 
                                
                                    J. P. Kotthaus
                                
                                et al.
                            
                            (1974). 
                            Cyclotron Resonance of Electrons in an Inversion Layer on Si. 
                            Physical Review Letters
                            , 32
                            (3)
                            , 104-107.
                            https://doi.org/10.1103/physrevlett.32.104
                        

Identifiers

DOI: 10.1103/physrevlett.32.104