Abstract
Resonance enhanced inelastic light scattering from a quasi-two-dimensional electron gas confined at the interface of abruptly doped $\mathrm{GaAs}/n\ensuremath{-}{\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ heterojunctions has been measured. The samples were fabricated using molecular-beam epitaxy with a high-contrast doping technique. The results show strong evidence for intersubband excitations in a two-dimensional electron system.
Keywords
HeterojunctionPhysicsMolecular beam epitaxyScatteringElectronDopingResonance (particle physics)Atomic physicsMaterials scienceCondensed matter physicsEpitaxyCrystallographyOpticsNuclear physicsNanotechnologyChemistry
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Publication Info
- Year
- 1979
- Type
- article
- Volume
- 42
- Issue
- 19
- Pages
- 1308-1311
- Citations
- 138
- Access
- Closed
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Cite This
G. Abstreiter,
K. H. Ploog
(1979).
Inelastic Light Scattering from a Quasi-Two-Dimensional Electron System in GaAs-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">As</mml:mi></mml:math>Heterojunctions.
Physical Review Letters
, 42
(19)
, 1308-1311.
https://doi.org/10.1103/physrevlett.42.1308
Identifiers
- DOI
- 10.1103/physrevlett.42.1308