Abstract

InGaN multi-quantum-well (MQW) structure laser diodes (LDs) fabricated from III-V nitride materials were grown by metalorganic chemical vapor deposition on sapphire substrates. The mirror facet for a laser cavity was formed by etching of III-V nitride films without cleaving. As an active layer, the InGaN MQW structure was used. The InGaN MQW LDs produced 215 mW at a forward current of 2.3 A, with a sharp peak of light output at 417 nm that had a full width at half-maximum of 1.6 nm under the pulsed current injection at room temperature. The laser threshold current density was 4 kA/cm 2 . The emission wavelength is the shortest one ever generated by a semiconductor laser diode.

Keywords

OptoelectronicsMaterials scienceLaserChemical vapor depositionDiodeSapphireQuantum wellNitrideQuantum well laserEtching (microfabrication)WavelengthMetalorganic vapour phase epitaxySemiconductor laser theoryActive layerLight-emitting diodeLaser diodeSemiconductorCurrent densityLayer (electronics)OpticsQuantum dot laserEpitaxyNanotechnology

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Publication Info

Year
1996
Type
article
Volume
35
Issue
1B
Pages
L74-L74
Citations
2475
Access
Closed

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Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. (1996). InGaN-Based Multi-Quantum-Well-Structure Laser Diodes. Japanese Journal of Applied Physics , 35 (1B) , L74-L74. https://doi.org/10.1143/jjap.35.l74

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DOI
10.1143/jjap.35.l74

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Data completeness: 81%