Ion Beam Lithography

G. Stengl; Hans Löschner; E. Hammel; E. D. Wolf

Abstract

Apparatus and method for projection ion beam lithography are described which allow formation of low distortion, large field, reduced images of a mask pattern at a wafer plane using an optical column of practical size. The column shown is comprised of an accelerating Einzel lens followed by a gap lens, with numerous cooperating features. By coordinated selection of the parameters of the optical column, lens distortion and chromatic blurring are simultaneously minimized. Real time measurement of the position of the image field with respect to the existing pattern on the wafer is employed before and during the time of exposure of the new field and means are provided to match the new field to the existing pattern even when the latter has been distorted by processing. A metrology system enables convenient calibration and adjustment of the apparatus.

Keywords

Distortion (music)OpticsLithographyMetrologyLens (geology)PhotolithographyWaferIon beam lithographyCalibrationProjection (relational algebra)Chromatic aberrationMaterials scienceComputer scienceChromatic scaleBeam (structure)PhysicsIon beamOptoelectronicsAlgorithm

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Publication Info

Year: 1987
Type: article
Pages: 625-633
Citations: 7
Access: Closed

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APA Style

                            
                                    G. Stengl, 
                                
                                    Hans Löschner, 
                                
                                    E. Hammel
                                
                                et al.
                            
                            (1987). 
                            Ion Beam Lithography. 
                            
                            , 625-633.