Abstract
Recent advances in the modeling of semiconductor heterostructures with complex geometries allow one to go beyond band-structure engineering to the more general concept of wavefunction engineering. In this work, we illustrate how tailoring the band mixing and spatial distribution of the carriers leads to an expanded degree of control over such properties as the dispersion relations, interband and intersubband transition matrix elements, nonlinear optical and electro-optical coefficients, and lifetimes. The computations are based on a multiband finite element method (FEM) approach which readily yields energy levels, electron and hole wavefunctions, and optical matrix elements for heterostructures with arbitrary layer thickness, material composition, and internal strain. Application of the FEM to laterally-patterned heterostructures is also discussed.
Keywords
HeterojunctionWave functionFinite element methodMaterials scienceSemiconductorElectronic band structureDispersion relationBand gapMatrix (chemical analysis)Transfer-matrix method (optics)PhysicsOptoelectronicsOpticsCondensed matter physicsQuantum mechanics
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Publication Info
- Year
- 1995
- Type
- article
- Volume
- 04
- Issue
- 01
- Pages
- 191-243
- Citations
- 62
- Access
- Closed
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Cite This
L. R. Ram‐Mohan,
J. R. Meyer
(1995).
MULTIBAND FINITE ELEMENT MODELING OF WAVEFUNCTION-ENGINEERED ELECTRO-OPTICAL DEVICES.
Journal of Nonlinear Optical Physics & Materials
, 04
(01)
, 191-243.
https://doi.org/10.1142/s0218863595000094
Identifiers
- DOI
- 10.1142/s0218863595000094