Abstract
A four-fold classification of the current-controlled instabilities in amorphous semiconductors is proposed. The experimental evidence supporting a simple band model for the amorphous covalent alloys is given. The present understanding of the reversible switching effects and of the switching with memory is discussed.
Keywords
Amorphous semiconductorsAmorphous solidSemiconductorSimple (philosophy)Materials sciencePhysicsEngineering physicsOptoelectronicsCondensed matter physicsNanotechnologyChemistryCrystallography
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Publication Info
- Year
- 1969
- Type
- article
- Volume
- 13
- Issue
- 5
- Pages
- 515-521
- Citations
- 87
- Access
- Closed
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Cite This
H. Fritzsche
(1969).
Physics of Instabilities in Amorphous Semiconductors.
IBM Journal of Research and Development
, 13
(5)
, 515-521.
https://doi.org/10.1147/rd.135.0515
Identifiers
- DOI
- 10.1147/rd.135.0515