Masahiro Hirano

Iron-Based Layered Superconductor La[O_1-<i>_x</i>F<i>_x</i>]FeAs (<i>x</i> = 0.05−0.12) with <i>T</i>_c = 26 K

We report that a layered iron-based compound LaOFeAs undergoes superconducting transition under doping with F- ions at the O2- site. The transition temperature (Tc) exhibits a t...

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO 3 (ZnO) 5 , as an electron channel ...

Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films

We have investigated carrier transport in a crystalline oxide semiconductor InGaO3(ZnO)5 using single-crystalline thin films. When carrier concentration is less than 2×1018cm−3,...

A p‐Type Amorphous Oxide Semiconductor and Room Temperature Fabrication of Amorphous Oxide p–n Heterojunction Diodes

Oxide electronics , which together with amorphous semiconductors could become a rapid‐growth field, have come a step closer with the first report of a p‐type amorphous oxide sem...

Iron-Based Layered Superconductor:  LaOFeP

We report superconductivity in an iron-based layered oxy-pnictide LaOFeP. LaOFeP is composed of an alternate stack of lanthanum oxide (La3+O2-) and iron pnictide (Fe2+P3-) layer...

Nickel-Based Oxyphosphide Superconductor with a Layered Crystal Structure, LaNiOP

A layered oxyphosphide, LaNiOP, was synthesized by solid-state reactions. This crystal was confirmed to have a layered structure composed of an alternating stack of (La(3+)O(2-)...

Amorphous transparent conductive oxide InGaO₃(ZnO)_m (m≤ 4): a Zn4s conductor

Abstract With the purpose of creating ZnO-based amorphous transparent conductors, a range of amorphous films InGaoO3(ZnO)m (where m ≤ 4) was prepared using a pulsed-laser deposi...

Electronic structure and transport properties in the transparent amorphous oxide semiconductor<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>2</mml:mn><mml:mi/><mml:mi mathvariant="normal">CdO</mml:mi><mml:mi>⋅</mml:mi><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">GeO</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>

An amorphous $2\mathrm{CdO}\ensuremath{\cdot}{\mathrm{GeO}}_{2}$ thin film with a band gap of 3.4 eV can be converted from an insulator (conductivity $\ensuremath{\sim}{10}^{\en...