Single-source polyphosphazene-derived N, P, S co-doping HCs for high-performance SIBs anode

Changjun Yang; Mengmeng Yu; Yan Liu; Bing Cui; Long-Jiang Sun; Jingquan Sha

doi:10.1016/j.solidstatesciences.2025.108180

Related Publications

Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium

Hui Fang , Mahmut Tosun , Gyungseon Seol +4 more

We report here the first degenerate n-doping of few-layer MoS2 and WSe2 semiconductors by surface charge transfer using potassium. High-electron sheet densities of ~1.0 × 10(13)...

2013 Nano Letters 742 citations

Cobalt in Nitrogen-Doped Graphene as Single-Atom Catalyst for High-Sulfur Content Lithium–Sulfur Batteries

Zhenzhen Du , Xingjia Chen , Wei Hu +8 more

Because of their high theoretical energy density and low cost, lithium-sulfur (Li-S) batteries are promising next-generation energy storage devices. The electrochemical performa...

2019 Journal of the American Chemical Society 1404 citations

A Stretchable Form of Single-Crystal Silicon for High-Performance Electronics on Rubber Substrates

Dahl‐Young Khang , Hanqing Jiang , Young Huang +1 more

We have produced a stretchable form of silicon that consists of submicrometer single-crystal elements structured into shapes with microscale, periodic, wavelike geometries. When...

2005 Science 1640 citations

Design of Single-Atom Co–N5 Catalytic Site: A Robust Electrocatalyst for CO2 Reduction with Nearly 100% CO Selectivity and Remarkable Stability

Weng‐Chon Cheong , Yu Wang , Lirong Zheng +19 more

We develop an N-coordination strategy to design a robust CO2 reduction reaction (CO2RR) electrocatalyst with atomically dispersed Co-N5 site anc...

2018 Journal of the American Chemical Society 1155 citations

Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions

Márcio Fontana , Tristan Deppe , Anthony K. Boyd +4 more

Semiconducting molybdenum disulfphide has emerged as an attractive material for novel nanoscale optoelectronic devices due to its reduced dimensionality and large direct bandgap...

2013 Scientific Reports 503 citations

Publication Info

Year: 2025
Type: article
Volume: 173
Pages: 108180-108180
Citations: 0
Access: Closed

External Links

View on DOI.org

Social Impact

Altmetric

Single-source polyphosphazene-derived N, P, S co-doping HCs for high-performance SIBs anode

PlumX Metrics

Social media, news, blog, policy document mentions

Citation Metrics

OpenAlex

Cite This

APA Style

                            
                                    Changjun Yang, 
                                
                                    Mengmeng Yu, 
                                
                                    Yan Liu
                                
                                et al.
                            
                            (2025). 
                            Single-source polyphosphazene-derived N, P, S co-doping HCs for high-performance SIBs anode. 
                            Solid State Sciences
                            , 173
                            
                            , 108180-108180.
                            https://doi.org/10.1016/j.solidstatesciences.2025.108180

Identifiers

DOI: 10.1016/j.solidstatesciences.2025.108180