Strain Engineering on Electronic Properties, Carrier Mobility and Quantum Capacitance of Si 9 C 15 Siligraphene as Supercapacitor Electrode

Zhangyin Zhai; Haoxiang Guo; Rui‐Zhou Zhang; Xiao‐Hong Li; Hong‐Ling Cui

doi:10.1002/qute.202500803

Abstract

ABSTRACT As a warped honeycomb structure, Si 9 C 15 exhibits high stability and mobility, and excellent thermoelectric efficiency. Electronic and optical properties, and quantum capacitance of Si 9 C 15 under biaxial strain are investigated by density functional theory (DFT). Si 9 C 15 exhibits remarkable mechanical stability, with the maximum strain limit of +14% under tensile strain and −16% under compressive strain. Tensile strain keeps the direct character of Si 9 C 15 , while a direct‐to‐indirect transition occurs for Si 9 C 15 under compressive strain. Tensile strain is favorable for faster transfer of electron and hole. Si 9 C 15 under −3% strain has the lowest electron mobility, while Si 9 C 15 under −2% strain has the lowest hole mobility. The systems under tensile strains have better conductivity than those under compressive strains. Si 9 C 15 monolayers under strains are promising cathode materials in whole potential.

Affiliated Institutions

Henan University of Science and Technology CN

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Year: 2025
Type: article
Citations: 0
Access: Closed

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APA Style

                            
                                    Zhangyin Zhai, 
                                
                                    Haoxiang Guo, 
                                
                                    Rui‐Zhou Zhang
                                
                                et al.
                            
                            (2025). 
                            Strain Engineering on Electronic Properties, Carrier Mobility and Quantum Capacitance of Si <sub>9</sub> C <sub>15</sub> Siligraphene as Supercapacitor Electrode. 
                            Advanced Quantum Technologies
                            
                            .
                            https://doi.org/10.1002/qute.202500803

Identifiers

DOI: 10.1002/qute.202500803

Strain Engineering on Electronic Properties, Carrier Mobility and Quantum Capacitance of Si <sub>9</sub> C <sub>15</sub> Siligraphene as Supercapacitor Electrode