Abstract

Surface-state density in n-channel MOS transistors operating in the inversion mode has been determined from the channel conductance and related to 1/ <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f</tex> noise in these devices. It has been found that the noise is proportional to the surface-state density at the Fermi level. The surface orientation and temperature affect the noise output only indirectly, through their influence on the surface-state density and the position of the Fermi level at the surface.

Keywords

Noise (video)TransistorFlicker noiseConductanceSurface statesMaterials scienceOptoelectronicsSurface (topology)Electrical engineeringPhysicsCondensed matter physicsCMOSEngineeringComputer scienceMathematicsNoise figureVoltageGeometry

Affiliated Institutions

Related Publications

Low-density parity-check codes

A low-density parity-check code is a code specified by a parity-check matrix with the following properties: each column contains a small fixed number <tex xmlns:mml="http://www....

1962 IEEE Transactions on Information Theory 10397 citations

Publication Info

Year
1967
Type
article
Volume
14
Issue
11
Pages
775-777
Citations
67
Access
Closed

External Links

Social Impact

Social media, news, blog, policy document mentions

Citation Metrics

67
OpenAlex

Cite This

G. Abowitz, E. Arnold, E.A. Leventhal (1967). Surface states and 1/f noise in MOS transistors. IEEE Transactions on Electron Devices , 14 (11) , 775-777. https://doi.org/10.1109/t-ed.1967.16105

Identifiers

DOI
10.1109/t-ed.1967.16105