Abstract
The complex index of refraction N=n−ik for amorphous SiO2 is derived in the energy range 0.03–1.0 eV by Kramers-Kronig analysis of reflectance data. The results are used to compute the transmission, reflectance, and absorptivity of thin layers of SiO2 on Si substrates in the vicinity of the 0.14-eV (9 μ) lattice absorption band of SiO2. The dependence of these quantities on the layer thickness and angle of incidence is discussed.
Keywords
Molar absorptivityRefractive indexMaterials scienceSiliconInfraredReflectivityKramers–Kronig relationsAmorphous solidAmorphous siliconRefractionOpticsAttenuation coefficientAbsorption (acoustics)Angle of incidence (optics)Thin filmOptoelectronicsChemistryCrystalline siliconPhysicsCrystallographyNanotechnology
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Publication Info
- Year
- 1979
- Type
- article
- Volume
- 50
- Issue
- 2
- Pages
- 1053-1057
- Citations
- 101
- Access
- Closed
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Cite This
Herbert R. Philipp
(1979).
The infrared optical properties of SiO2 and SiO2 layers on silicon.
Journal of Applied Physics
, 50
(2)
, 1053-1057.
https://doi.org/10.1063/1.326080
Identifiers
- DOI
- 10.1063/1.326080