Abstract
We propose models of two dimensional paramagnetic semiconductors where the\nintrinsic spin Hall effect is exactly quantized in integer units of a\ntopological charge. The model describes a topological insulator in the bulk,\nand a "holographic metal" at the edge, where the number of extended edge states\ncrossing the Fermi level is dictated by (exactly equal to) the bulk topological\ncharge. We also demonstrate the spin Hall effect explicitly in terms of the\nspin accumulation caused by the adiabatic flux insertion.\n
Keywords
Topological insulatorPhysicsCondensed matter physicsQuantum Hall effectParamagnetismSpin (aerodynamics)Quantum spin Hall effectQuantization (signal processing)Symmetry protected topological orderTopological orderAdiabatic processTopology (electrical circuits)Topological quantum numberCharge (physics)Spin Hall effectSemiconductorQuantum mechanicsSpin polarizationMagnetic fieldElectronQuantumMathematics
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Publication Info
- Year
- 2006
- Type
- article
- Volume
- 74
- Issue
- 8
- Citations
- 859
- Access
- Closed
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Cite This
Xiao-Liang Qi,
Yong-Shi Wu,
Shengbai Zhang
(2006).
Topological quantization of the spin Hall effect in two-dimensional paramagnetic semiconductors.
Physical Review B
, 74
(8)
.
https://doi.org/10.1103/physrevb.74.085308
Identifiers
- DOI
- 10.1103/physrevb.74.085308