Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si
We present the materials growth and properties of both epitaxial and amorphous films of Gd2O3 (κ=14) and Y2O3 (κ=18) as the alternative gate dielectrics for Si. The rare earth o...
We present the materials growth and properties of both epitaxial and amorphous films of Gd2O3 (κ=14) and Y2O3 (κ=18) as the alternative gate dielectrics for Si. The rare earth o...
Single-crystal epitaxial thin films of the isotropic metallic oxides Sr 1– x Ca x RuO 3 (0 ≤ x ≤ 1) were grown on miscut SrTiO 3 (100) substrates in situ by 90° off-axis sputter...
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