Heteroepitaxial graphite on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>6</mml:mn><mml:mi>H</mml:mi><mml:mo>−</mml:mo><mml:mi mathvariant="normal">SiC</mml:mi><mml:mn/><mml:mo>(</mml:mo><mml:mn>0001</mml:mn><mml:mo>)</mml:mo><mml:mo>:</mml:mo></mml:math> Interface formation through conduction-band electronic structure
When annealed at elevated temperatures under vacuum, silicon carbide surfaces show a tendency towards graphitization. Using the sensitivity of empty conduction-band states dispe...