The electronic properties of inversion and accumulation layers at semiconductor-insulator interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional behavior, such as electrons in semiconductor heterojunctions and superlattices and on liquid helium, are reviewed. Energy levels, transport properties, and optical properties are considered in some detail, especially for electrons at the (100) silicon-silicon dioxide interface. Other systems are discussed more briefly.
The quantum confinement of electrons and holes in low‐dimensional semiconductor structures strongly influences the properties of “quantum wires and dots” and therefore has an im...
Resonance enhanced inelastic light scattering from a quasi-two-dimensional electron gas confined at the interface of abruptly doped $\mathrm{GaAs}/n\ensuremath{-}{\mathrm{Al}}_{...
We develop a mean-field theory of carrier-induced ferromagnetism in diluted\nmagnetic semiconductors. Our approach represents an improvement over standard\nRKKY model allowing s...
We have studied the magnetotransport properties of two-dimensional electrons in thin GaAs-${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ multilayers with fields ...
When the Fermi level is pinned in the energy gap between two Landau levels of two-dimensional electrons, the response of electrons in the completely filled levels to an electric...
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