Abstract
The excitation spectrum of the 0.11-eV Mn acceptor in GaAs has been thoroughly investigated by uniaxial stress and Zeeman fourier transform infrared spectroscopy. The results give strong evidence for the ${3\mathrm{d}}^{5}$ +shallow hole model for the ${\mathrm{Mn}}^{0}$ center. The deformation potentials as well as the g values determined for the hole are in close agreement with those previously reported for the ${1\mathrm{S}}_{3\mathrm{/}2}$(${\mathrm{\ensuremath{\Gamma}}}_{8}$) state for shallow acceptors in GaAs. All experimental results are in accordance with a J=1 ground-state level derived from exchange coupling of the shallow ${1\mathrm{S}}_{3\mathrm{/}2}$(${\mathrm{\ensuremath{\Gamma}}}_{8}$) hole and the S=5/2 ${\mathrm{Mn}}^{\mathrm{\ensuremath{-}}}$ core. A splitting between J=2 and J=1 levels in the range from 9 to 12 meV is inferred and is considerably larger than the 2--3 meV splitting previously suggested
Keywords
Zeeman effectPhysicsGround stateCrystallographyAtomic physicsCoupling (piping)ExcitationAcceptorNuclear magnetic resonanceCondensed matter physicsMaterials scienceChemistryQuantum mechanics
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Publication Info
- Year
- 1997
- Type
- article
- Volume
- 55
- Issue
- 11
- Pages
- 6938-6944
- Citations
- 196
- Access
- Closed
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Cite This
Margareta K. Linnarsson,
Erik Janzén,
B. Monemar
et al.
(1997).
Electronic structure of the GaAs:<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Mn</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>scenter.
Physical review. B, Condensed matter
, 55
(11)
, 6938-6944.
https://doi.org/10.1103/physrevb.55.6938
Identifiers
- DOI
- 10.1103/physrevb.55.6938