Abstract
Cyclotron resonance in the $n$-type inversion layer of silicon has been observed at 4.2\ifmmode^\circ\else\textdegree\fi{}K for electron densities between (0.38 and 9.0) \ifmmode\times\else\texttimes\fi{} ${10}^{12}$/${\mathrm{cm}}^{2}$. The electron mass is ${m}^{*}=(0.20\ifmmode\pm\else\textpm\fi{}0.01){m}_{0}$ and independent of electron density. The far-infrared mobility decreases monotonically as the electron density increases, in marked contrast to the dc mobility which exhibits a strong maximum in the same range of electron concentrations.
Keywords
Cyclotron resonanceElectronSiliconElectron densityFar infraredInfraredElectron cyclotron resonanceAtomic physicsPhysicsCyclotronEffective mass (spring–mass system)Materials scienceNuclear magnetic resonanceCondensed matter physicsOpticsNuclear physicsOptoelectronicsQuantum mechanics
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Publication Info
- Year
- 1974
- Type
- article
- Volume
- 32
- Issue
- 3
- Pages
- 107-110
- Citations
- 91
- Access
- Closed
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Cite This
S. J. Allen,
D. C. Tsui,
J. V. Dalton
(1974).
Far-Infrared Cyclotron Resonance in the Inversion Layer of Silicon.
Physical Review Letters
, 32
(3)
, 107-110.
https://doi.org/10.1103/physrevlett.32.107
Identifiers
- DOI
- 10.1103/physrevlett.32.107