Abstract
The conductivity of electrons in the inversion layer of silicon has been measured from 0 to 40 ${\mathrm{cm}}^{\ensuremath{-}1}$ at 1.2\ifmmode^\circ\else\textdegree\fi{}K in the metallic and localized regimes. The correlation between $\ensuremath{\sigma}(T)$ and $\ensuremath{\sigma}(\ensuremath{\omega})$ in the localized regime suggests that the drop in conductivity at low electron concentrations is caused by the appearance of a gap at the Fermi level.
Keywords
Condensed matter physicsConductivityElectronSigmaOmegaSiliconPhysicsMetalElectrical resistivity and conductivityFermi levelMaterials scienceAtomic physicsQuantum mechanics
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Publication Info
- Year
- 1975
- Type
- article
- Volume
- 35
- Issue
- 20
- Pages
- 1359-1362
- Citations
- 115
- Access
- Closed
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Cite This
S. J. Allen,
D. C. Tsui,
F. DeRosa
(1975).
Frequency Dependence of the Electron Conductivity in the Silicon Inversion Layer in the Metallic and Localized Regimes.
Physical Review Letters
, 35
(20)
, 1359-1362.
https://doi.org/10.1103/physrevlett.35.1359
Identifiers
- DOI
- 10.1103/physrevlett.35.1359