Keywords
Affiliated Institutions
Related Publications
Interaction between the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>d</mml:mi></mml:math>-Shells in the Transition Metals. II. Ferromagnetic Compounds of Manganese with Perovskite Structure
Recently, Jonker and Van Santen have found an empirical correlation between electrical conduction and ferromagnetism in certain compounds of manganese with perovskite structure....
Interplay between the magnetic and transport properties in the III-V diluted magnetic semiconductor<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Mn</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">As</mml:mi></mml:math>
Using a low-temperature molecular-beam epitaxy growth procedure, ${\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}\mathrm{As}$ --- a III-V diluted magnetic semiconductor --- is...
Magnetotransport properties of<i>p</i>-type (In,Mn)As diluted magnetic III-V semiconductors
Magnetotransport properties of p-type (In,Mn)As, a new diluted magnetic semiconductor based on a III-V semiconductor, are studied. The interaction between the holes and the Mn 3...
Spin-dependent tunneling and properties of ferromagnetic (Ga,Mn)As (invited)
Low-temperature molecular beam epitaxy allows one to dope GaAs with Mn over its solubility limit, making it possible to realize a III–V-based diluted magnetic semiconductor (Ga,...
Nearest-neighbor exchange constant and Mn distribution in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Zn</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml:mi mathvariant="normal">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Mn</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="normal">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>Te from high-field magnetization step and low-field susceptibility
Magnetization data in fields up to 210 kOe were obtained on ${\mathrm{Zn}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$${\mathrm{Mn}}_{\mathrm{x}}$Te samples with x=0.031 and 0.040. At...
Publication Info
- Year
- 1950
- Type
- article
- Volume
- 16
- Issue
- 3
- Pages
- 337-349
- Citations
- 1923
- Access
- Closed
External Links
Social Impact
Social media, news, blog, policy document mentions
Citation Metrics
Cite This
Identifiers
- DOI
- 10.1016/0031-8914(50)90033-4