Abstract
An all-polymer semiconductor integrated device is demonstrated with a high-mobility conjugated polymer field-effect transistor (FET) driving a polymer light-emitting diode (LED) of similar size. The FET uses regioregular poly(hexylthiophene). Its performance approaches that of inorganic amorphous silicon FETs, with field-effect mobilities of 0.05 to 0.1 square centimeters per volt second and ON-OFF current ratios of >10 6 . The high mobility is attributed to the formation of extended polaron states as a result of local self-organization, in contrast to the variable-range hopping of self-localized polarons found in more disordered polymers. The FET-LED device represents a step toward all-polymer optoelectronic integrated circuits such as active-matrix polymer LED displays.
Keywords
Materials scienceOptoelectronicsPolymerPolaronTransistorDiodeAmorphous solidVariable-range hoppingField-effect transistorConjugated systemSemiconductorAmorphous siliconSiliconNanotechnologyElectrical engineeringThermal conductionVoltageChemistryCrystalline siliconPhysicsOrganic chemistryElectron
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Publication Info
- Year
- 1998
- Type
- article
- Volume
- 280
- Issue
- 5370
- Pages
- 1741-1744
- Citations
- 2719
- Access
- Closed
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Cite This
Henning Sirringhaus,
Nir Tessler,
Richard H. Friend
(1998).
Integrated Optoelectronic Devices Based on Conjugated Polymers.
Science
, 280
(5370)
, 1741-1744.
https://doi.org/10.1126/science.280.5370.1741
Identifiers
- DOI
- 10.1126/science.280.5370.1741