Hiromichi Ohta

Amorphous transparent conductive oxide InGaO₃(ZnO)_m (m≤ 4): a Zn4s conductor

Abstract With the purpose of creating ZnO-based amorphous transparent conductors, a range of amorphous films InGaoO3(ZnO)m (where m ≤ 4) was prepared using a pulsed-laser deposi...

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO 3 (ZnO) 5 , as an electron channel ...

Transparent oxide optoelectronics

This article reviews transparent oxide optoelectronic devices based on our efforts focusing on transparent thin-film transistors fabricated from single-crystalline films of InGa...

Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films

We have investigated carrier transport in a crystalline oxide semiconductor InGaO3(ZnO)5 using single-crystalline thin films. When carrier concentration is less than 2×1018cm−3,...

A p‐Type Amorphous Oxide Semiconductor and Room Temperature Fabrication of Amorphous Oxide p–n Heterojunction Diodes

Oxide electronics , which together with amorphous semiconductors could become a rapid‐growth field, have come a step closer with the first report of a p‐type amorphous oxide sem...