Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

Abstract

We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO 3 (ZnO) 5 , as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of ∼10 6 and a field-effect mobility of ∼80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent electronics for next-generation optoelectronics.

Keywords

Materials scienceOptoelectronicsFabricationThin-film transistorSemiconductorAmorphous solidTransistorThin filmElectron mobilityField-effect transistorOxideNanotechnologyElectrical engineeringLayer (electronics)ChemistryVoltage

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Publication Info

Year: 2003
Type: article
Volume: 300
Issue: 5623
Pages: 1269-1272
Citations: 1840
Access: Closed

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APA Style

                            
                                
                                    Kenji Nomura, 
                                
                                    Hiromichi Ohta, 
                                
                                    Kazushige Ueda
                                
                                et al.
                            
                            (2003). 
                            Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor. 
                            Science
                            , 300
                            (5623)
                            , 1269-1272.
                            https://doi.org/10.1126/science.1083212
                        

Identifiers

DOI: 10.1126/science.1083212