Abstract

The field-effect mobility in thin-film transistors based on α-sexithiophene (α-6T) and related materials displays a temperature dependence that is remarkably nonmonotonic. Above a transition temperature T T (specific to a given material) the transport is thermally activated, whereas below T T there is a very steep enhancement of the mobility. In the activated regime, the results are well described by the theoretical predictions for small polaron motion made by Holstein in 1959. An analysis of the transistor characteristics shows that the hopping transport in these devices is intrinsic. Performance limits for devices based on α-6T and related materials were established; these limits point to the strong possibility that better molecular materials for transistor applications may be designed from first principles.

Keywords

TransistorPolaronMaterials scienceField-effect transistorThin-film transistorOptoelectronicsElectron mobilityCondensed matter physicsField (mathematics)NanotechnologyPhysicsQuantum mechanicsMathematicsVoltage

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Publication Info

Year
1996
Type
article
Volume
272
Issue
5267
Pages
1462-1464
Citations
233
Access
Closed

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Cite This

Luisa Torsi, A. Dodabalapur, Lewis J. Rothberg et al. (1996). Intrinsic Transport Properties and Performance Limits of Organic Field-Effect Transistors. Science , 272 (5267) , 1462-1464. https://doi.org/10.1126/science.272.5267.1462

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DOI
10.1126/science.272.5267.1462