Single- and multi-wall carbon nanotube field-effect transistors

Richard Martel; Thomas Schmidt; Herbert Shea; Tobias Hertel; Phaedon Avouris

doi:10.1063/1.122477

Abstract

We fabricated field-effect transistors based on individual single- and multi-wall carbon nanotubes and analyzed their performance. Transport through the nanotubes is dominated by holes and, at room temperature, it appears to be diffusive rather than ballistic. By varying the gate voltage, we successfully modulated the conductance of a single-wall device by more than 5 orders of magnitude. Multi-wall nanotubes show typically no gate effect, but structural deformations—in our case a collapsed tube—can make them operate as field-effect transistors.

Keywords

Carbon nanotubeMaterials scienceTransistorField-effect transistorConductanceBallistic conductionOptoelectronicsBallistic conduction in single-walled carbon nanotubesNanotechnologyVoltageCarbon nanotube field-effect transistorGate voltageNanotubeCondensed matter physicsOptical properties of carbon nanotubesElectrical engineeringPhysics

Affiliated Institutions

IBM Research - Thomas J. Watson Research Center US

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Publication Info

Year: 1998
Type: article
Volume: 73
Issue: 17
Pages: 2447-2449
Citations: 2772
Access: Closed

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APA Style

                            
                                
                                    Richard Martel, 
                                
                                    Thomas Schmidt, 
                                
                                    Herbert Shea
                                
                                et al.
                            
                            (1998). 
                            Single- and multi-wall carbon nanotube field-effect transistors. 
                            Applied Physics Letters
                            , 73
                            (17)
                            , 2447-2449.
                            https://doi.org/10.1063/1.122477
                        

Identifiers

DOI: 10.1063/1.122477