Physics of ultrathin-body silicon-on-insulator Schottky-barrier field-effect transistors

Joachim Knoch; M. Zhang; Joerg Appenzeller; S. Mantl

doi:10.1007/s00339-007-3868-1

Keywords

Schottky barrierSilicon on insulatorMOSFETOptoelectronicsScatteringMaterials scienceTransistorMean free pathMetal–semiconductor junctionSchottky diodeField-effect transistorDopantSiliconDopingCondensed matter physicsPhysicsOpticsVoltage

Affiliated Institutions

Related Publications

A Stretchable Form of Single-Crystal Silicon for High-Performance Electronics on Rubber Substrates

Dahl‐Young Khang , Hanqing Jiang , Young Huang +1 more

We have produced a stretchable form of silicon that consists of submicrometer single-crystal elements structured into shapes with microscale, periodic, wavelike geometries. When...

2005 Science 1640 citations

Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions

Márcio Fontana , Tristan Deppe , Anthony K. Boyd +4 more

Semiconducting molybdenum disulfphide has emerged as an attractive material for novel nanoscale optoelectronic devices due to its reduced dimensionality and large direct bandgap...

2013 Scientific Reports 503 citations

Scaling the Si MOSFET: from bulk to SOI to bulk

Ran Yan , A. Ourmazd , K.F. Lee

Scaling the Si MOSFET is reconsidered. Requirements on subthreshold leakage control force conventional scaling to use high doping as the device dimension penetrates into the dee...

1992 IEEE Transactions on Electron Devices 879 citations

PROGRESS IN PLASTIC ELECTRONICS DEVICES

Th. Birendra Singh , Niyazi Serdar Sariçiftçi

▪ Abstract Organic field-effect transistors (OFETs) based on solution-processible polymeric as well as small molecular semiconductors have shown impressive improvements in their...

2006 Annual Review of Materials Research 227 citations

Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices

Xiangfeng Duan , Yu Huang , Yi Cui +2 more

Nanowires and nanotubes carry charge and excitons efficiently, and are therefore potentially ideal building blocks for nanoscale electronics and optoelectronics. Carbon nanotube...

2001 Nature 3326 citations

Publication Info

Year: 2007
Type: article
Volume: 87
Issue: 3
Pages: 351-357
Citations: 85
Access: Closed

External Links

View on DOI.org

Social Impact

Altmetric

Physics of ultrathin-body silicon-on-insulator Schottky-barrier field-effect transistors

PlumX Metrics

Social media, news, blog, policy document mentions

Citation Metrics

OpenAlex

Cite This

APA Style

                            
                                
                                    Joachim Knoch, 
                                
                                    M. Zhang, 
                                
                                    Joerg Appenzeller
                                
                                et al.
                            
                            (2007). 
                            Physics of ultrathin-body silicon-on-insulator Schottky-barrier field-effect transistors. 
                            Applied Physics A
                            , 87
                            (3)
                            , 351-357.
                            https://doi.org/10.1007/s00339-007-3868-1
                        

Identifiers

DOI: 10.1007/s00339-007-3868-1