Abstract
We have investigated carrier transport in a crystalline oxide semiconductor InGaO3(ZnO)5 using single-crystalline thin films. When carrier concentration is less than 2×1018cm−3, logarithm of electrical conductivity decreases in proportion to T−1∕4 and room-temperature Hall mobility was as low as ∼1cm2(Vs)−1. When carrier concentration was increased to 4×1018cm−3, the conduction mechanism changed to degenerate conduction and room-temperature Hall mobility was steeply increased to >10cm2(Vs)−1, showing metal–insulator transition behavior. These results are explained by percolation conduction over distribution of potential barriers formed around conduction band edge. The potential distribution is a consequence of potential modulation originating from random distribution of Ga3+ and Zn2+ ions in the crystal structure of InGaO3(ZnO)5.
Keywords
Materials scienceCondensed matter physicsSemiconductorThermal conductionElectron mobilityConductivityPercolation (cognitive psychology)Electrical resistivity and conductivityOxideDegenerate semiconductorOptoelectronicsChemistryElectrical engineering
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Publication Info
- Year
- 2004
- Type
- article
- Volume
- 85
- Issue
- 11
- Pages
- 1993-1995
- Citations
- 271
- Access
- Closed
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Cite This
Kenji Nomura,
Toshio Kamiya,
Hiromichi Ohta
et al.
(2004).
Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films.
Applied Physics Letters
, 85
(11)
, 1993-1995.
https://doi.org/10.1063/1.1788897
Identifiers
- DOI
- 10.1063/1.1788897