Iron-Based Layered Superconductor: LaOFeP
We report superconductivity in an iron-based layered oxy-pnictide LaOFeP. LaOFeP is composed of an alternate stack of lanthanum oxide (La3+O2-) and iron pnictide (Fe2+P3-) layer...
We report superconductivity in an iron-based layered oxy-pnictide LaOFeP. LaOFeP is composed of an alternate stack of lanthanum oxide (La3+O2-) and iron pnictide (Fe2+P3-) layer...
A layered oxyphosphide, LaNiOP, was synthesized by solid-state reactions. This crystal was confirmed to have a layered structure composed of an alternating stack of (La(3+)O(2-)...
Abstract With the purpose of creating ZnO-based amorphous transparent conductors, a range of amorphous films InGaoO3(ZnO)m (where m ≤ 4) was prepared using a pulsed-laser deposi...
An amorphous $2\mathrm{CdO}\ensuremath{\cdot}{\mathrm{GeO}}_{2}$ thin film with a band gap of 3.4 eV can be converted from an insulator (conductivity $\ensuremath{\sim}{10}^{\en...
We review distinct photonic/electronic properties originating from built‐in nanostructures in transparent oxide‐based materials, emphasizing potential of nanostructures hidden i...
We report that a layered iron-based compound LaOFeAs undergoes superconducting transition under doping with F- ions at the O2- site. The transition temperature (Tc) exhibits a t...
We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO 3 (ZnO) 5 , as an electron channel ...
This article reviews transparent oxide optoelectronic devices based on our efforts focusing on transparent thin-film transistors fabricated from single-crystalline films of InGa...
We have investigated carrier transport in a crystalline oxide semiconductor InGaO3(ZnO)5 using single-crystalline thin films. When carrier concentration is less than 2×1018cm−3,...
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