Hideo Hosono

Iron-Based Layered Superconductor:  LaOFeP

We report superconductivity in an iron-based layered oxy-pnictide LaOFeP. LaOFeP is composed of an alternate stack of lanthanum oxide (La3+O2-) and iron pnictide (Fe2+P3-) layer...

Nickel-Based Oxyphosphide Superconductor with a Layered Crystal Structure, LaNiOP

A layered oxyphosphide, LaNiOP, was synthesized by solid-state reactions. This crystal was confirmed to have a layered structure composed of an alternating stack of (La(3+)O(2-)...

Amorphous transparent conductive oxide InGaO₃(ZnO)_m (m≤ 4): a Zn4s conductor

Abstract With the purpose of creating ZnO-based amorphous transparent conductors, a range of amorphous films InGaoO3(ZnO)m (where m ≤ 4) was prepared using a pulsed-laser deposi...

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An amorphous $2\mathrm{CdO}\ensuremath{\cdot}{\mathrm{GeO}}_{2}$ thin film with a band gap of 3.4 eV can be converted from an insulator (conductivity $\ensuremath{\sim}{10}^{\en...

Built‐in Nanostructures in Transparent Oxides for Novel Photonic and Electronic Functions Materials

We review distinct photonic/electronic properties originating from built‐in nanostructures in transparent oxide‐based materials, emphasizing potential of nanostructures hidden i...

Iron-Based Layered Superconductor La[O_1-<i>_x</i>F<i>_x</i>]FeAs (<i>x</i> = 0.05−0.12) with <i>T</i>_c = 26 K

We report that a layered iron-based compound LaOFeAs undergoes superconducting transition under doping with F- ions at the O2- site. The transition temperature (Tc) exhibits a t...

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

P-type electrical conduction in transparent thin films of CuAlO2

Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO 3 (ZnO) 5 , as an electron channel ...

Transparent oxide optoelectronics

This article reviews transparent oxide optoelectronic devices based on our efforts focusing on transparent thin-film transistors fabricated from single-crystalline films of InGa...

Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films

We have investigated carrier transport in a crystalline oxide semiconductor InGaO3(ZnO)5 using single-crystalline thin films. When carrier concentration is less than 2×1018cm−3,...

Working hypothesis to explore novel wide band gap electrically conducting amorphous oxides and examples