Abstract
This article reviews transparent oxide optoelectronic devices based on our efforts focusing on transparent thin-film transistors fabricated from single-crystalline films of InGaO3(ZnO)5 with a natural superlattice structure, near-ultraviolet (UV) emitting diodes composed of heteroepitaxially grown p-type SrCu2O2 and n-type ZnO, and single-crystalline NiO and ZnO pn-heterojunction diode UV detectors.
Keywords
Materials scienceOptoelectronicsNon-blocking I/OHeterojunctionSuperlatticeUltravioletDiodeOxideThin filmThin-film transistorNanotechnologyLayer (electronics)Chemistry
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Publication Info
- Year
- 2004
- Type
- article
- Volume
- 7
- Issue
- 6
- Pages
- 42-51
- Citations
- 351
- Access
- Closed
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Cite This
Hiromichi Ohta,
Hideo Hosono
(2004).
Transparent oxide optoelectronics.
Materials Today
, 7
(6)
, 42-51.
https://doi.org/10.1016/s1369-7021(04)00288-3
Identifiers
- DOI
- 10.1016/s1369-7021(04)00288-3