A p‐Type Amorphous Oxide Semiconductor and Room Temperature Fabrication of Amorphous Oxide p–n Heterojunction Diodes

Abstract

Oxide electronics , which together with amorphous semiconductors could become a rapid‐growth field, have come a step closer with the first report of a p‐type amorphous oxide semiconductor, ZnO·Rh 2 O 3 . The thin‐film deposition of this material at room temperature and the fabrication of p–n heterojunction diodes on flexible plastic sheets (see Figure) are demonstrated.

Keywords

Materials scienceHeterojunctionFabricationAmorphous solidDiodeSemiconductorOxideOptoelectronicsThin filmNanotechnologyMetallurgyCrystallography

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Publication Info

Year: 2003
Type: article
Volume: 15
Issue: 17
Pages: 1409-1413
Citations: 161
Access: Closed

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APA Style

                            
                                
                                    S. Narushima, 
                                
                                    Hiroshi Mizoguchi, 
                                
                                    Ken‐ichi Shimizu
                                
                                et al.
                            
                            (2003). 
                            A p‐Type Amorphous Oxide Semiconductor and Room Temperature Fabrication of Amorphous Oxide p–n Heterojunction Diodes. 
                            Advanced Materials
                            , 15
                            (17)
                            , 1409-1413.
                            https://doi.org/10.1002/adma.200304947
                        

Identifiers

DOI: 10.1002/adma.200304947